SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2N6493
DESCRIPTION ·W...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2N6493
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 70 5 15 100 150 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2N6493
CHARACTERISTICS
Tm=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ;IB=0
70
V
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=100mA
3
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=100mA
4
V
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
2.8
V
ICEO
Collector cut-off current
VCE=50V; IB=0
1.0
mA
ICEX
Collector cut-off current
VCE=100V; VBE(off)=-1.5V
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE-1
DC current gain
IC=4A...