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2N6259 Dataheets PDF



Part Number 2N6259
Manufacturers SavantIC
Logo SavantIC
Description Silicon Power Transistors
Datasheet 2N6259 Datasheet2N6259 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and DC-DC converters or inverters PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6259 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEB.

  2N6259   2N6259



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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and DC-DC converters or inverters PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6259 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 170 150 7 16 30 4 15 150 200 -65~200 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Collector-emitter saturation voltge Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ;IB=0 IC=8A ;IB=0.8A IC=16A ;IB=3.2A IC=8A ; VCE=2V VCE=130V; IB=0 VCE=150V; VBE(off)=1.5V VCB=150V; IE=0 VEB=7V; IC=0 IC=8A ; VCE=2V IC=16A ; VCE=4V 15 10 MIN 150 2N6259 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.5 2.5 2.0 10 2.0 2.0 5.0 60 V V V mA mA mA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6259 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 .


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