2N6054

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6053 2N6054 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6053 2N6054 2N6053 2N6054 CONDITIONS Open emitter VALUE -60 -80 -60 -80 -5 -8 -16 -120 TC=25 100 200 -65~200 UNIT V VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature Open base Open collector V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N6053 2N6054 CHARACTERISTICS Tm=25 unless otherwise specified PARAMETER 2N6053 IC=-0.1 A ;IB=0 2N6054 IC=-4A ;IB=-16mA IC=-8A ;IB=-80mA IC=-8A ;IB=-80mA IC=-4A ; VCE=-3V 2N6053 ICEO Collector cut-off current 2N6054 2N6053 ICEX Collector cut-off current 2N6054 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance VCE=-40V; IB=0 VCE=-60V; VBE(off)=-1.5V TC=150 VCE=-80V; VBE(off)=-1.5V TC=150 VEB=-...