V23990-P848-C4X-PM

V23990-P848-A4X/C4x-PM preliminary datasheet flow PIM 0 3rd www.DataSheet4U.com Gen flow 0 housing 1200V / 4A Features ● flow0 2 clip-in housing in 12 and 17mm height ● Trench Fieldstop IGBT's 4 technology ● Optional w/o BRC Target Applications ● Industrial Drives ● Embedded Generation Schematic Types ● V23990-P848-A49-PM 17mm height ● V23990-P848-A48-PM 12mm height ● V23990-P848-C49-PM 17mm height; w/o BRC ● V23990-P848-C48-PM 12mm height; w/o BRC Maximum Ratings Tj=25°C, unless otherwise specified Parameter Symbol Condition Value Unit Input Rectifier Diode Repetitive peak reverse voltage Forward current per diode Surge forward current I2t-value Power dissipation per Diode Maximum Junction Temperature VRRM IFAV IFSM tp=10ms I2t Ptot Tjmax Tj=Tjmax 180°sine Tj=Tjmax 200 Th=80°C Tc=80°C 150 33 A2s W °C DC current IR=0.05mA Tj=25°C Th=80°C Tc=80°C 1600 28 4,0,$J$2*6-6)="","",OFFSET 220 V A A copyright Vincotech Ltd. 1 Revision: 1 V23990-P848-A4X/C4x-PM preliminary datasheet www.DataSheet4U.com Maximum Ratings Symbol Condition Value Unit Tj=25°C, unless otherwise specified Parameter Transistor Inverter Collector-emitter voltage DC collector current Repetitive peak collector current Power dissipation per IGBT Gate-emitter peak voltage Short circuit ratings* Maximum Junction Temperature VCE IC ICpuls Ptot VGE tSC VCC Tjmax Tj=150°C VGE=15V Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C ±20 10 800 175 Tj=25°C Th=80°C Tc=80°C 1200 tbd V A A W V us V °C 12 * ...