Fast IGBT in NPT-technology
SKW07N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• Lower Eo...
Description
SKW07N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C
2
C
G
E
PG-TO-247-3-1 (TO-247AC)
VCE 1200V
IC 8A
Eoff 0.7mJ
Tj 150°C
Marking K07N120
Package PG-TO-247-3-21
Symbol VCE IC
Value 1200 16.5 7.9
Unit V A
ICpul s IF
27 27
13 7 IFpul s VGE tSC Ptot 27 ±20 10 125 V µs W
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_1 Apr 06
Power Semiconductors
SK...
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