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SKIIP20NAB06I Dataheets PDF



Part Number SKIIP20NAB06I
Manufacturers Semikron
Logo Semikron
Description Miniskiip 2 Semikron Integrated Intelligent Power
Datasheet SKIIP20NAB06I DatasheetSKIIP20NAB06I Datasheet (PDF)

SKiiP 20 NAB 06 - SKiiP 20 NAB 06 I www.DataSheet4U.com Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 600 ± 20 22 / 15 44 / 30 36 / 24 72 / 48 800 25 370 680 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 20 NAB 06 SKiiP 20 NAB 06 I 3) 3-phase br.

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SKiiP 20 NAB 06 - SKiiP 20 NAB 06 I www.DataSheet4U.com Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 600 ± 20 22 / 15 44 / 30 36 / 24 72 / 48 800 25 370 680 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 20 NAB 06 SKiiP 20 NAB 06 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M2 Bridge Rectifier VRRM Theatsink = 80 °C ID IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min. Characteristics Symbol Conditions 1) IGBT - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 300 V; VGE = ± 15 V td(on) tr IC = 15 A; Tj = 125 °C td(off) Rgon = Rgoff = 68 Ω tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT Diode 2) - Inverter VF = VEC IF = 25 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 25 A, VR = – 300 V IRRM diF/dt = – 500 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode 2) - Chopper VF = VEC IF = 10 A Tj = 25 (125) °C VTO Tj = 125 °C Tj = 125 °C rT IRRM IF = 10 A, VR = – 300 V diF/dt = – 200 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff Rthjh per diode Diode - Rectifier VF IF = 25 A, Tj = 25 °C Rthjh per diode Temperature Sensor RTS T = 25 / 100 °C Mechanical Data M1 case to heatsink, SI Units Case mechanical outline see page B 16 – 8 2 min. – – – – – – – – – – – – – – – – – – – – – – – – typ. max. Units 2,1(2,2) 2,7(2,8) V 35 70 ns 50 100 ns 250 370 ns 500 750 ns 2,2 – mJ 0,8 – nF – 2,0 K/W V 1,45(1,4) 1,7(1,7) V 0,9 0,85 mΩ 32 22 – A 25 – µC 2,5 – mJ 0,75 1,7 K/W – V 1,45(1,4) 1,7(1,7) V 0,9 0,85 mΩ 80 55 A – 13 µC – 1,5 mJ – 0,45 K/W 2,7 – 1,2 – 1000 / 1670 – M2 2,5 – 2,6 V K/W Ω Nm UL recognized file no. E63532 • • specification of shunts and temperature sensor see part A common characteristics see page B16–3 Options • also available with single phase rectifier (called 20 NEB 06 or 20 NEB 06 I3)) • also available with faster IGBTs (type ... 063), data sheet on request 1) 2) 3) 4) Theatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) With integrated DC and/or AC shunts accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used. 5 % 4) 1% 16,5 mΩ 10 mΩ B 16 – 23 Rcs(dc) Rcs(ac) 000131 © by SEMIKRON www.DataSheet4U.com Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Tj = 125 °C VCE = 300 V VGE = ± 15 V RG = 68 Ω Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C Tj = 125 °C VCE = 300 V VGE = ± 15 V IC = 15 A Fig. 3 Turn-on /-off energy = f (IC) ICpuls = 15 A Fig. 4 Turn-on /-off energy = f (RG) VGE = 0 V f = 1 MHz Fig. 5 Typ. gate charge characteristic B 16 – 24 Fig. 6 Typ. capacitances vs. VCE 000131 © by SEMIKRON 2. Common characteristics of MiniSKiiP www.Data.


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