SKIIP20NAB06

SKiiP 20 NAB 06 - SKiiP 20 NAB 06 I www.DataSheet4U.com Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 600 ± 20 22 / 15 44 / 30 36 / 24 72 / 48 800 25 370 680 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 20 NAB 06 SKiiP 20 NAB 06 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M2 Bridge Rectifier VRRM Theatsink = 80 °C ID IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min. Characteristics Symbol Conditions 1) IGBT - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 300 V; VGE = ± 15 V td(on) tr IC = 15 A; Tj = 125 °C td(off) Rgon = Rgoff = 68 Ω tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT Diode 2) - Inverter VF = VEC IF = 25 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 25 A, VR = – 300 V IRRM diF/dt = – 500 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode 2) - Chopper VF = VEC IF = 10 A Tj = 25 (125) °C VTO Tj = 125 °C Tj = 125 °C rT IRRM IF = 10 A, VR = – 300 V diF/dt = – 200 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff Rthjh per diode Diode - Rectifier VF IF = 25 A, Tj = 25 °C Rthjh per diode Temperature Sensor RTS T = 25 / 100 °C Mechanical Data M1 case to heatsink, SI Units Case mechan...