2N5739

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N5739 2N5740 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5739 Collector-base voltage 2N5740 2N5739 VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter voltage 2N5740 Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=100 Open collector Open base -100 -5 -10 -20 -4 20 150 -65~200 V A A A W Open emitter -100 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.56 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5739 IC=-0.2A ;IB=0 2N5740 IC=-5A; IB=-0.5A IC=-10A ;IB=-2.5A IC=-10A ;IB=-2.5A IC=-4A ; VCE=-4V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150 VEB=-5V; IC=0 IC=-5A ; VCE=-5V IC=-10A ; VCE=-5V IC=-0.5A ; VCE=-10V CONDITIONS 2N5739 2N5740 SYMBOL MIN -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -100 -1.0 -3.0 -2.5 -1.5 -0.1 -0.5 -5.0 -1.0 20 4 10 MHz 80 V V V V mA mA mA VCEsat-1 VCEsat-2 VBEsat VBE ICBO...