2N5559

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5559 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 120 7 10 15 100 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N5559 SYMBOL MAX UNIT VCEO(SUS) VCEsat VBE ICEO ICEX IEBO hFE Collector-emitter sustaining voltage IC=0.2A ;IB=0 IC=10A; IB=2A IC=10A ; VCE=4V VCE=140V; IB=0 VCE=120V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=4A ; VCE=2V 120 V Collector-emitter saturation voltage 5.0 V Base-emitter on voltage 5.7 V Collector cut-off current 5.0 2.0 10 2.0 mA Collector cut-off current mA Emitter cut-off current mA DC curr...