SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 ...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-3 package ·High DC current gain ·Low saturation voltage ·High Safe Operating Area APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. ·These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5498
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 130 7 15 4 200 150 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2N5498
SYMBOL
MAX
UNIT
VCEO(SUS) VCER VCEsat-1 VCEsat-2 ICEO ICEX IEBO hFE fT
Collector-emitter sustaining voltage
IC=0.2A ;IB=0 IC=0.2A ;RBE=100Ohm IC=8A; IB=0.8A IC=15A ;IB=3A VCE=130V; IB=0 VCE=130V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=15A ; VCE=5V IC=1A ; VCE=10V
130
V
Collector-emitter sustaining voltage
150
V
Co...