2SB709A

Transys Electronics L I M I T E D www.DataSheet4U.com SOT-23 Plastic-Encapsulated Transistors SOT-23 1. BASE 2. EMITTER 2SB709A FEATURES Power dissipation PCM: TRANSISTOR (PNP) 3. COLLECTOR 0.2 W (Tamb=25℃) 0. 95 1. 0 2. 4 1. 3 Collector current -0.2 A ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Transition frequency unless otherwise specified) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat) Test conditions MIN -45 -45 -7 -0.1 -100 160 460 -0.5 60 V MHz MAX UNIT V V V Ic= -10 µA, IE=0 Ic= -2 mA, IB=0 IE= -10 µA, IC=0 VCB= -20 V , IE=0 VCE= -10 V , IB=0 VCE= -10V, IC= -2mA IC=-100 mA, IB= -10mA VCE= -10V, IC= -1mA 0. 4 µA µA fT f=200MHz CLASSIFICATION OF HFE Rank Range Marking BR Q 160-260 R 210-340 S 290-460 ...