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STK28N3LLH5 Dataheets PDF



Part Number STK28N3LLH5
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STK28N3LLH5 DatasheetSTK28N3LLH5 Datasheet (PDF)

www.DataSheet4U.com STK28N3LLH5 N-channel 30 V, 0.0035 Ω , 28 A, PolarPAK® STripFET™V Power MOSFET Preliminary Data Features Type STK28N3LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.0045 Ω RDS(on)*Qg 68.4 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche rugged.

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www.DataSheet4U.com STK28N3LLH5 N-channel 30 V, 0.0035 Ω , 28 A, PolarPAK® STripFET™V Power MOSFET Preliminary Data Features Type STK28N3LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.0045 Ω RDS(on)*Qg 68.4 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche ruggedness PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK® Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code STK28N3LLH5 Marking 283L5 Package PolarPAK® Packaging Tape and reel Bottom View Top View September 2008 Rev 2 1/13 www.st.com 13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents www.DataSheet4U.com STK28N3LLH5 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ............................................... 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STK28N3LLH5 www.DataSheet4U.com Electrical ratings 1 Electrical ratings Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor EAS (3) Tj Tstg Single pulse avalanche energy Operating junction temperature Storage temperature Value 30 ± 22 28 17.5 112 5.2 0.0416 1 -55 to 150 Unit V V A A A W W/°C J °C Table 2. Symbol VDS VGS ID (1) ID IDM (2) PTOT (1) 1. When mounted on FR-4 board of 1inch2, 2 oz Cu and ≤10sec 2. Pulse width limited by package 3. Starting TJ = 25°C, ID = 10A, VDD = 25V Table 3. Symbol Thermal data Parameter Typ. 20 1 2.8 Max. 24 1.2 3.4 Unit °C/W °C/W °C/W Rthj-amb(1) Thermal resistance junction-amb Rthj-c(2) Rthj-c(3) Thermal resistance junction-case (top drain) Thermal resistance junction-case (source) 1. When mounted on FR-4 board of 1inch2, 2 oz Cu and ≤10sec 2. Steady state 3. Measured at source pin when the device is mounted on FR-4 board in steady state 3/13 Electrical characteristics www.DataSheet4U.com STK28N3LLH5 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125°C VGS = ± 22 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 14 A VGS= 4.5 V, ID= 14 A 1 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA V Ω Ω 2.5 0.0035 0.0045 0.0047 0.0055 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Gate input resistance Test conditions Min. Typ. 2300 450 61 19 TBD TBD TBD TBD Max. Unit pF pF pF nC nC nC nC nC VDS =25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 28 A VGS =4.5 V (see Figure 3) VDD=15 V, ID = 28 A VGS =4.5 V (see Figure 8) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain RG TBD Ω 4/13 STK28N3LLH5 www.DataSheet4U.com Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD= 15 V, ID= 14 A, RG=4.7 Ω, VGS=4.5 V (see Figure 2) VDD=15 V, ID= 14 A, RG=4.7 Ω, VGS=4.5 V (see Figure 2) Min. Typ. TBD TBD Max. Unit ns ns Turn-off delay time Fall time TBD TBD ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 25 A, VGS=0 ISD= 25 A, di/dt = 100 A/µs, VDD=20 V, Tj=150°C (see Figure 7) TBD TBD TBD Test conditions Min. Typ. Max. 28 112 1.1 Unit A A V ns nC A 1. Pulse width limited by package 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/13 Test circuits www.DataSheet4U.com STK28N3LLH5 3 Test circuits Figure 3. Gate charge test circuit Figure 2. Sw.


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