CMP0817BA0-I

CMP0817BA0-I Document Title 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM www.DataSheet4U.com CMOS LPRAM Revision History Revision No. 0.0 0.1 0.2 Initial Draft Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions Removed 60ns descriptions History Draft date May. 2nd, 2004 Oct. 26 , 2005 th Remark Final Final Final Aug. 22 , 2006 nd 1 Revision 0.2 Aug. 2006 CMP0817BA0-I FEATURES Process Technology : Full CMOS CMOS LPRAM 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM www.DataSheet4U.com Organization : 512K x 16 Power Supply Voltage : 2.7~3.3V Three state output and TTL Compatible Package Type : 48-FBGA-6.00x8.00 mm2 Separated I/O power(VCCQ) & Core Power(VCC) Easy memory expansion with /CS1, CS2, and /OE features Automatic power-down when deselected PRODUCT FAMILY Operating Temperature Operating Voltage (V) Speed Min. Typ. Max. CMP0817BA0-F70I Industrial (-40~85’C) 2.7 3.0 3.3 70ns Typ. 1.5mA Power Dissipation ICC1 f = 1MHz Max. 3mA ICC2 f = fmax Typ. 12mA Max. 20mA ISB1 (CMOS Standby Current) Typ. 30uA Max. 70uA Product Family 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Precharge circuit. A B C D E F G H /LB I/O9 /OE /UB A0 A3 A1 A4 A2 /CS CS2 I/O1 Clk gen. VCC VSS Memory array ...