2SK3799
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
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2SK3799
Unit: mm : RDS...
2SK3799
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOSIV)
www.DataSheet4U.com
2SK3799
Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| = 6.0 S (typ.)
Switching
Regulator Applications
z Low drain-source ON resistance z High forward transfer admittance
z Low leakage current : IDSS = 100μA (max) (VDS = 720 V) z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 8 24 50 1080 8 5 150 −55~150 Unit V V V A A W mJ A mJ °C °C
1. Gate 2. Drain 3. Source
Pulse (Note 1)
Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
— SC-67 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test r...