2SK3775-01

2SK3775-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 Super FAP-G Series www.DataSheet4U.com Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Foot Print Equivalent circuit schematic Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 300 300 ±32 ±2.4 ±128 ±30 32 597.4 27 20 5 270 2.40 +150 -55 to +150 Unit V V A A A V A mJ mJ Remarks VGS=-30V S1 : Source G : Gate D : Drain Ta=25°C S2 : Source Note *1:Surface mounted on 1000mm2,t=1.6mm Note *2 Note *3 Note *4 FR-4 PCB(Drain pad area:500mm2) Note *2:Tch < = 150°C,Repetitive and Non-repetitive Note *3:StartingTch=25°C,IAS=13A,L=6.13mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. kV/µs VDS< = 300V See to the ‘Avalanche Energy’ graph kV/µs Note *5 Note *4:Repetitive rating:Pulse width limited by Tc=25°C W maximum channel temperature. Ta=25°C Note*1 See to the ‘Transient Theemal impeda...