2SK3740

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3740 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. ORDERING INFORMATION PART NUMBER 2SK3740-ZK PACKAGE TO-263 (MP-25ZK) (TO-263) FEATURES Gate voltage rating: ±30 V Low on-state resistance RDS(on) = 160 mΩ MAX. (VGS = 10 V, ID = 10 A) Low gate charge QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 250 ±30 ±20 ±60 1.5 100 150 –55 to +150 20 40 V V A A W W °C °C A mJ Total Power Dissipation Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and...