2SK3714

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3714 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3714 PACKAGE Isolated TO-220 FEATURES Super low on-state resistance R DS(on)1 = 13 m Ω MAX. (V GS = 10 V, I D = 25 A) R DS(on)2 = 22 m Ω MAX. (V GS = 4.0 V, I D = 25 A) Low Ciss : C iss = 3200 pF TYP. Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±50 ±160 35 2.0 150 −55 to +150 31 96 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, V DD = 30 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16537EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan The mark ...