DATA SHEET
MOS FIELD EFFECT TRANSISTOR
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2SK3713
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The ...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
www.DataSheet4U.com
2SK3713
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3713 is N-channel MOS Field Effect
Transistor designed for high voltage and high speed switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3713-SK PACKAGE TO-262
FEATURES
Super high VGS(off): VGS(off) = 3.8 to 5.8 V Low Crss: Crss = 6.5 pF TYP. Low QG: QG = 25 nC TYP. Low on-state resistance: RDS(on) = 0.83 Ω MAX. (VGS = 10 V, ID = 5 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 ±30 ±10 ±35 100 1.5 150 −55 to +150 10 6
V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 100 V, L = 100 µH, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16588EJ1V0DS00 (1st edition) Date Published September 2003 NS CP(K) Printed in Japan
2003
2SK3713
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