Provisional Data Sheet No. PD 9.1291B
HEXFET® POWER MOSFET
www.DataSheet4U.com
IRFY430CM
N-CHANNEL
500 Volt, 1.5Ω HE...
Provisional Data Sheet No. PD 9.1291B
HEXFET® POWER MOSFET
www.DataSheet4U.com
IRFY430CM
N-CHANNEL
500 Volt, 1.5Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET
transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Product Summary
Part Number IRFY430CM BVDSS 500V RDS(on) 1.5Ω ID 4.5A
Features
n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ V GS=10V, TC = 25°C ID @ VGS=10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy Avalance Current Repetitive Avalanche Ener...