Document
MCC
Features
l l l l Low Reverse Recovery Time Low Reverse Capacitance Low Forward Voltage Drop
omponents 21201 Itasca Street Chatsworth !"# $
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LLSD101A THRU LLSD101C
Schottky Barrier Switching Diode
Guard Ring Construction for Transient Protection
Mechanical Data
l Case: MiniMELF, Glass l Terminals: Solderable per MIL -STD -202, Method 208 l Polarity: Indicated by Cathode Band l Weight: 0.05 grams ( approx.)
Cathode Mark
MINIMELF
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current(Note 1) Non-Repetitive Peak @ t<=1.0s Forward Surge Current @ t=10us Power Dissipation(Note 1) Thermal Resistance(Note 1) Operation & Storage Temp. Range Symbol LLSD101A LLSD101B LLSD101C V RRM VRWM 60V 50V 40V VR VR(RMS) I FM I FSM Pd R Tj, T STG 42V 35V 15mA 50mA 2.0A DIMENSION 400mW 375K/W -55 to 150 C
o
C
B A
28V
DIM A B C
INCHES MIN .134 .008 .055 MAX .142 .016 .059 MIN 3.40 .20 1.40
MM MAX 3.60 .40 1.50
NOTE
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic Symbol Peak LLSD101A Reverse LLSD101B IR M Current LLSD101C LLSD101A LLSD101B Forward LLSD101C VFM Volt. Drop LLSD101A LLSD101B LLSD101C Junction LLSD101A Capacitance LLSD101B Cj LLSD101C Reverse Recovery Time t rr Min Max 200 0.41 0.40 0.39 1.00 0.95 0.90 2.0 2.1 2.2 1.0 Unit nA Test Cond. V R =50V V R =40V V R =30V I F=1.0mA I F=1.0mA I F=1.0mA I F= 1 5 m A I F= 1 5 m A I F= 1 5 m A V R =0V, f=1.0MHz I F= I R =5mA, recover to 0.1 I
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SUGGESTED SOLDER PAD LAYOUT
0.105
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V
0.075”
0.030”
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pF
ns
R
Note: 1. Valid provided that electrodes are kept at ambient temperature
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LLSD101A thru LLSD101C
MCC
10
B A
2
Tj = 25°C
IF, FORWARD CURRENT (mA)
C
1.0
Cj, CAPACITANCE (pF)
C
1
0.1
A
B
0.01 0 0.5 VF, FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristic Variations for Primary Conduction 1.0
0 0 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Fig. 2 Typ. Junction Capacitance vs Reverse Voltage
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