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IKW08T120 Dataheets PDF



Part Number IKW08T120
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet IKW08T120 DatasheetIKW08T120 Datasheet (PDF)

TrenchStop® Series IKW08T120 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D  Short circuit withstand time – 10s  Designed for : G E - Frequency Converters - Uninterrupted Power Supply  TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable.

  IKW08T120   IKW08T120



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TrenchStop® Series IKW08T120 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D  Short circuit withstand time – 10s  Designed for : G E - Frequency Converters - Uninterrupted Power Supply  TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior PG-TO-247-3  NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code IKW08T120 1200V 8A 1.7V 150C K08T120 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  1200V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj Tstg Package PG-TO-247-3 Value 1200 16 8 24 24 16 8 24 20 10 70 -40...+150 -55...+150 Unit V A V s W C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.4 12.06.2013 TrenchStop® Series Soldering temperature, 1.6mm (0.063 in.) from case for 10s - IKW08T120 260 IFAG IPC TD VLS 2 Rev. 2.4 12.06.2013 TrenchStop® Series IKW08T120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Symbol RthJC RthJCD RthJA Conditions Max. Value 1.7 2.3 40 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Integrated gate resistor Symbol Conditions V(BR)CES VCE(sat) VF VGE(th) ICES VGE=0V, IC=0.5mA VGE = 15V, IC=8A Tj=25C Tj=125C Tj=150C VGE=0V, IF=8A Tj=25C Tj=125C Tj=150C IC=0.3mA,VCE=VGE VCE=1200V, VGE=0V Tj=25C Tj=150C IGES gfs RGint VCE=0V,VGE=20V VCE=20V, IC=8A min. 1200 - 5.0 - Value typ. - 1.7 2.0 2.2 1.7 1.7 1.7 5.8 5 none Unit max. -V 2.2 - 2.2 - 6.5 mA 0.2 2.0 100 nA -S Ω IFAG IPC TD VLS 3 Rev. 2.4 12.06.2013 TrenchStop® Series IKW08T120 Dynamic Characteristic Input capacitance Ciss VCE=2.


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