Document
TrenchStop® Series
IKW08T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D
Short circuit withstand time – 10s
Designed for :
G E
- Frequency Converters
- Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution - high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat) Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW08T120 1200V 8A
1.7V
150C K08T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC 1200V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature
VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj Tstg
Package PG-TO-247-3
Value 1200
16 8 24 24
16 8 24 20 10
70
-40...+150 -55...+150
Unit V A
V s W C
1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.4 12.06.2013
TrenchStop® Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s -
IKW08T120
260
IFAG IPC TD VLS
2
Rev. 2.4 12.06.2013
TrenchStop® Series
IKW08T120
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient
Symbol RthJC RthJCD RthJA
Conditions
Max. Value 1.7 2.3 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Integrated gate resistor
Symbol
Conditions
V(BR)CES VCE(sat)
VF
VGE(th) ICES
VGE=0V, IC=0.5mA VGE = 15V, IC=8A Tj=25C Tj=125C Tj=150C VGE=0V, IF=8A Tj=25C Tj=125C Tj=150C IC=0.3mA,VCE=VGE VCE=1200V, VGE=0V Tj=25C Tj=150C
IGES gfs RGint
VCE=0V,VGE=20V VCE=20V, IC=8A
min.
1200
-
5.0
-
Value typ.
-
1.7 2.0 2.2
1.7 1.7 1.7 5.8
5 none
Unit max.
-V
2.2 -
2.2 -
6.5 mA
0.2 2.0 100 nA
-S Ω
IFAG IPC TD VLS
3
Rev. 2.4 12.06.2013
TrenchStop® Series
IKW08T120
Dynamic Characteristic
Input capacitance
Ciss
VCE=2.