AM1214-300
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Appl...
AM1214-300
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications.
www.DataSheet4U.com
PACKAGE STYLE .400 2L FLG(A)
4x .062 x 45° 2xB A .040 x 45° C F
E D G H J K
FEATURES:
Internal Input/Output Matching Network Common Base PG = 6.5 db at 325 W/1400 MHz Omnigold™ Metalization System
D IM A B C D E F G H
2xR
I L
N M M IN IM U M
inches / m m
P
M AXIM U M
inches / m m
.135 / 3.43 .100 / 2.54 .050 / 1.27 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .490 / 12.45 .100 / 2.54 .690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00
.145 / 3.68 .120 / 3.05 .396 / 10.06 .130 / 3.30 .407 / 10.34 .510 / 12.95 .710 / 18.03 .910 / 23.11 .006 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θJC 18.75 A 55 V 730 W @ TC = 25 °C -65 °C to +250 °C -65 °C to +200 °C 0.24 °C/W
I J K L M N P
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVEBO ICES hFE PG ηC POUT IC = 50 mA IC = 50 mA IE = 15 mA VCE = 50 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65 65 3.0 30
UNITS
V V V mA --dB % W
VCE = 5.0 V
IC = 5.0 A
10 6.3 40 270 6.8 45 300
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VCC = 50 V
PIN = 63 W
f = 1235 to 1365 MHz
Conditions: Pulse Width = 50 µS
Duty Cycle = 4%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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