DISCRETE SEMICONDUCTORS
DATA SHEET
LLE15180X NPN microwave power transistor
Product specification Supersedes data of Se...
DISCRETE SEMICONDUCTORS
DATA SHEET
LLE15180X
NPN microwave power
transistor
Product specification Supersedes data of September 1994 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very good stability of the characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.4 GHz and 1.6 GHz. DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
Top view
handbook, 4 columns
LLE15180X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.5 VCE (V) 24 ICQ (A) 0.05 PL1 (W) ≥15 Gpo (dB) ≥7.8 ηC (%) typ. 50 Zi; ZL (Ω) see Figs 6 and 7
PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
1
c b
3
e
2
MAM112
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains bery...