2SD5702

isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5702 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 16 A 60 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD5702 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 1.5 V IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 200 mA ICBO Collector-Base Cutoff Current VCB=800V; IE= 0 10 uA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 10 30 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 5 15 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage tf Fall Time IF= 6A IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 50...