SIHFZ10

Power MOSFET IRFZ10, SiHFZ10 Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 11 3.1 5.8 Single 0.20 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current TC = 25 °C VGS at 10 V TC = 100 °C ID Pulsed Drain Currenta IDM Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive r...