RMDA25000

RMDA25000 23-28 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs MMIC amplifier utilizing Raytheon’s advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. 32 dB small signal gain (typ.) 21 dBm saturated power out (typ.) Circuit contains individual source Vias Chip Size 2.79 mm x 1.63 mm Features www.DataSheet4U.com Absolute Maximum Ratings Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Symbol Vd Vg Vdg ID PIN TC TStg Rjc Value +6 -2 +8 360 +10 -30 to +85 -55 to +125 44 Unit Volts Volts Volts mA dBm °C °C °C/W Electrical Characteristics (At 25°C) 50 Ω system, Vd=+5 V, Quiescent current (Idq)=250 mA Parameter Frequency Range Gate Supply Voltage1(Vg) Gain Small Signal Gain Variation vs. Frequency Power Output at 1 dB Compression Power Output Saturated: (Pin=-5 dBm) Min 23 27 Typ -0.4 32 +/-2 22 23 Max 28 36 Unit GHz V dB dB dBm dBm Parameter Drain Current at Pin=-5 dBm Drain Current at P1 dB Compression Power Added Efficiency (PAE): at P1dB OIP...