polyfet rf devices
LK721
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
polyfet rf devices
LK721
General Description Silicon VDMOS and LDMOS
transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t
transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS
TRANSISTOR 35.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 150 Watts Junction to Case Thermal Resistance o 1.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 20 V
15.0 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 65 TYP
35.0 WATTS OUTPUT )
MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.40 A, Vds = 12.5 V, F = Idq = 0.40 A, Vds = 12.5 V, F =
500 MHz 500 MHz
η
VSWR
Relative Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback C...