KSH13003
KSH13003
High Voltage Power Transistor D-PACK for Surface Mount Applications
• • • a• High speed Switching Sui...
KSH13003
KSH13003
High Voltage Power
Transistor D-PACK for Surface Mount Applications
a High speed Switching Suitable for Switching
Regulator Motor Control Straight Lead (I.PACK, I Suffix) Lead Formed t a S for h Surface e e Mount t Applications 4 U . (No c Suffix) o m
1
D-PAK 1.Base
1
I-PAK 3.Emitter
w
w
w
.
D
2.Collector
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 40 150 - 65 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) IEBO hFE VCE(sat) Parameter * Collector-Emitter Breakdown Voltage Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Test Condition IC = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A 4 1.1 4.0 0.7 21 8 5 Min. 400 Typ. Max. 10 40 0.5 1 3 1 1.2 V V V V V pF MHz µs µs µs Units V µA
VBE(sat) Cob fT tON tSTG tF
* Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON time Storage time F...