JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
2SC4115
TRANSISTOR (NPN)
S...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate
Transistors
2SC4115
TRANSISTOR (
NPN)
SOT-89
1. BASE
FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) www.DataSheet4U.com z Excellent current gain characteristics. z Complements to 2SA1585 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 20 6 3 500 150 -55-150 Units V V V A mW ℃ ℃
1 2 3
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage* Transition frequency *pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat fT Test conditions MIN 40 20 6 0.1 0.1 120 560 0.5 200 290 V MHz TYP MAX UNIT V V V μA μA
IC= 50μA, IE=0 IC=1mA , IB=0 IE=50μA, IC=0 VCB=30V, IE=0 VEB= 5V, IC=0 VCE=2V, IC= 0.1A IC= 2A, IB=0.1A VCE=2V, IC=0.5 A F=100MHz
CLASSIFICATION OF hFE
Rank Range marking Q 120-270 4115Q R 180-390 4115R S 270-560 4115S
Typical characteristics
2SC4115
www.DataSheet4U.com
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