STP23NM60ND

STB23NM60ND-STF23NM60ND STI23NM60ND-STP/W23NM60ND N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power MOSFET (with fast diode) Preliminary Data Features www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω ID 1 3 3 12 STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND 20 A 20 A 20 A(1) 20 A 20 A D²PAK 2 1 3 I²PAK TO-247 3 1 2 1 2 3 1. Limited by wire bonding ■ ■ ■ ■ ■ The worldwide best RDS(on) * area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities TO-220 TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND January 2008 Marking 23NM60ND 23NM60ND 23NM60ND 23NM60ND 23NM60ND Rev 1 Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube 1/15 www.st.com 15 This is preliminary infor...