STW23NM60ND

STW23NM60ND Datasheet N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package Features Order code VDS @ TJ max RDS(on) max. ID t(s) 3 c 2 1 du TO-247 lete Pro D(2, TAB) STW23NM60ND 650 V Fast-recovery body diode Low gate charge and input capacitance Low on-resistance RDS(on) 100% avalanche tested High dv/dt ruggedness Applications Switching applications 0.180 Ω 19.5 A bso G(1) t(s) - O S(3) AM01475v1_noZen Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Obsolete Produc Product status link STW23NM60ND Product summary Order code STW23NM60ND Marking 23NM60ND Package TO-247 Packing Tube DS13218 - Rev 1 - January 2020 For further information contact your local STMicroelectronics sales office. www.st.com STW23NM60ND Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value VDS Drain-source voltage 600 VGS Gate-source voltage ±25 ID Drain current (continuous) at TC = 25 °C ) ID Drain current (continuous) at TC = 100 °C t(s IDM(1) Drain current (pulsed) uc PTOT Total power dissipation at TC = 25 °C rod IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) P EAS Single pulse avala...