N-channel Power MOSFET
STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-2...
Description
STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET
Features
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Type
VDSS (@Tjmax)
RDS(on) max
ID
1
3
3 12
STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N
1. Limited only by maximum temperature allowed ■ ■ ■
19 A 19 A 650 V 0.180 Ω 19 A (1)
D²PAK
2 1 3
I²PAK
19 A 19 A
3 1 2
TO-247
3 1 2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220
TO-220FP
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Order codes Marking 23NM60N 23NM60N 23NM60N 23NM60N 23NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube
STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N
March 2008
Rev 3
1/19
www.st.com 19
Contents
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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