AS7C33256FT18B

December 2004 ® AS7C33256FT18B 3.3V 256K × 18 Flow Through Synchronous SRAM Features Organization: 262,144 words × 18 bits Fast clock to data access: 6.5/7.5/8.0/10.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow through operation Asynchronous output enable control Availalbe in 100-pin TQFP package Individual byte write and Global write Multiple chip enables for easy expansion 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ Linear or interleaved burst control Snooze mode for reduced power standby Common data inputs and data outputs www.DataSheet4U.com Logic block diagram LBO CLK ADV ADSC ADSP A[17:0] CLK CS CLR Burst logic 2 2 18 Q D CS Address register CLK 256K × 18 Memory array 18 16 18 18 18 GWE BWb BWE BWa CE0 CE1 CE2 D DQb Q Byte Write registers CLK D DQa Q Byte Write registers CLK D 2 OE Enable register Q CE CLK Output Buffers Input registers CLK ZZ Power down D Enable Q delay register CLK OE 18 DQ [a,b] Selection guide –65 Minimum cycle time Maximum clock access time Maximum operating current Maximum standby current Maximum CMOS standby current (DC) 7.5 6.5 250 120 30 -75 8.5 7.5 225 100 30 -80 10 8.0 200 90 30 -10 12 10.0 175 90 30 Units ns ns mA mA mA 12/10/04; v.1.4 Alliance Semiconductor P. 1 of 19 Copyright © Alliance Semiconductor. All rights reserved. AS7C33256FT18B ® 4 Mb Synchronous SRAM products list1,2 Org 256KX18 128KX32 128KX36 256KX18 128KX32 128KX36 256KX18 www.D...