(AS7C331MNTD32A / AS7C331MNTD36A) 3.3V 1M x 32/36 Pipelined SRAM
December 2004
®
AS7C331MNTD32A AS7C331MNTD36A
3.3V 1M × 32/36 Pipelined SRAM with NTDTM
Features • Organization: 1,048...
Description
December 2004
®
AS7C331MNTD32A AS7C331MNTD36A
3.3V 1M × 32/36 Pipelined SRAM with NTDTM
Features Organization: 1,048,576 words × 32 or 36 bits NTD™architecture for efficient bus operation Fast clock speeds to 200 MHz Fast clock to data access: 3.2/3.5/3.8 ns Fast OE access time: 3.2/3.5/3.8 ns Fully synchronous operation Asynchronous output enable control www.DataSheet4U.com Available in 100-pin TQFP packages Byte write enables Logic block diagram
A[19:0] 20 D
Clock enable for operation hold Multiple chip enables for easy expansion 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ Self-timed write cycles Interleaved or linear burst modes Snooze mode for standby operation
Address register Burst logic
Q
20
CLK CE0 CE1 CE2 R/W BWa BWb BWc BWd ADV / LD LBO ZZ 32/36 CLK
D
Q 20
Write delay addr. registers
CLK
Control logic
CLK
Write Buffer
1M x 32/36 SRAM Array
DQ[a,b,c,d]
D
Data Q Input Register
CLK
32/36 32/36 32/36
32/36 CLK CEN CLK OE
Output Register
32/36 OE
DQ[a,b,c,d]
Selection guide
-200 Minimum cycle time Maximum clock frequency Maximum clock access time Maximum operating current Maximum standby current Maximum CMOS standby current (DC)
12/23/04, V 1.6
-166 6 166 3.5 400 150 90
-133 7.5 133 3.8 350 140 90
Units ns MHz ns mA mA mA
P. 1 of 18
5 200 3.2 450 170 90
Alliance Semiconductor
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AS7C331MNTD32A AS7C331MNTD36A
®
32 Mb Synchronous SRA...
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