Document
SKM 100GB173D
Absolute Maximum Ratings Symbol Conditions IGBT
&6
& &9:
3 4 .0 5&
Values
+1,, ++, *10+0, < ., " @, /// A +0, *+.0@,,, 8, *0,+0, 1.,
Units
' ' 5& ' ' '
;6 3%= *3
3 4 .0 *8,- 5& 4 + 3>269'3 > ? 3 '& + / 3 4 .0 *8,- 5& 4 + 4 +, B /B 3= 4 +0, 5&
SEMITRANSTM 2 IGBT Modules
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Inverse diode
# #9: #:
SKM 100GB173D
Characteristics Symbol Conditions IGBT
;6*&6*3>&6 &6*&6
3 4 .0 5&
min.
@ 8
typ.
0 0 , + + 0 *+ D.C C *CC CC @ *@ @++ + , .8
max.
. , C + D *. +0. *C8C D *0-
Units
' E # # # E H
;6 4 &6 & 4 ' ;6 4 , &6 4 &6 3= 4 .0 *+.0- 5& 3= 4 .0 *+.0- 5& ;6 4 +0 3= 4 .0 *+.0- 5&
&
4 10 ' ;6 4 +0
%
Features
!"
# $ %
&'!
(&) (
&
) !
*+, -
*., -/
&
&
&
!&6 9&&GA66G * * 6 *6-
;6 4 , &6 4 .0 4 + : F
C,
/
" 34 , 10 *+- 5& && 4 +.,, & 4 10 ' 9; 4 9; 4 +, E 3= 4 +.0 5& ;6 4 < +0 @, @0 @,, 0 C0 *.+# 4 10 'B ;6 4 , B 3= 4 .0 *+.0- 5& 3= 4 +.0 *- 5& 3= 4 +.0 *- 5& # 4 10 'B 3= 4 .0 * +.0 - 5& J 4 'JK
Inverse diode
# 4 6& *3>3 I 6
99:
Typical Applications '& %
%
010 "
10, '& (& %
10, "+.,, (& 2 * / *
-
. . *.+ C D C8 *0+8 *+D-
. 1 *. C+ 0 +C
E ' K& H
;6 4
# 4 +,, 'B ;6 4 3= 4 .0 *+.0- 5& 3= 4 +.0 *- 5& 3= 4 +.0 *- 5& # 4 +,, 'B 3= 4 .0 *+.0 - 5& J 4 'JK
FWD
# 4 6& *3>3 I 6 9*="9*="-( 9*="-#( 9*": :
99:
. . *+ D+ . 1 +, *.1-
. 1 *. @+ 0 D
E ' K& H
;6 4
;)3
%
(
#M(
N :
:0 C . 0 , . , C , @ , ,0 0 0 +,
Thermal characteristics
LJM LJM LJM LJM
Mechanical data
GB
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14-06-2005 SEN
© by SEMIKRON
SKM 100GB173D
www.DataSheet4U.com
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
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14-06-2005 SEN
© by SEMIKRON
SKM 100GB173D
www.DataSheet4U.com
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
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14-06-2005 SEN
© by SEMIKRON
SKM 100GB173D
www.DataSheet4U.com
Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm
;)
&
( +
;'!
&
( . *O ( +-
&
( +
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
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14-06-2005 SEN
© by SEMIKRON
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