SI6802DQ

Si6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 www.DataSheet4U.com rDS(on) (W) 0.075 @ VGS = 4.5 V 0.110 @ VGS = 3.0 V ID (A) "3.3 "2.7 D TSSOP-8 D S S G 1 2 3 4 Top View S* N-Channel MOSFET D 8 D S S D *Source Pins 2, 3, 6, and 7 must be tied common. G Si6802DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg Symbol VDS VGS Limit 20 "12 "3.3 "2.6 "20 1.25 1.5 Unit V A W 1.0 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70188 S-49520—Rev. C, 18-Dec-96 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 83 Unit _C/W 2-1 Si6802DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VDS w 5 V, VGS = 3.0 V VGS = 4.5 V, ID = 3.3 A VGS = 3.0 V, ID = 2.7 A VDS = 10 V, ID = 3.3 A IS = 1.25 A, VGS = 0 V 15 A 6 0.048 0.067 10.3 0.7 1.2 0.075 0.110 W S V 0.6 "100 ...