DATA SHEET
SILICON TRANSISTORS
2SC3622, 3622A
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES
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PACKAGE DRAWING (UNIT: mm)
High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
Low VCE(sat): High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC362...
