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Z00607 Dataheets PDF



Part Number Z00607
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Standard 0.8A Triacs
Datasheet Z00607 DatasheetZ00607 Datasheet (PDF)

A2 G A1 A2 A1 G TO-92 Z00607MA A2 G A2 A1 SOT-223 Z00607MN Features • On-state rms current = 0.8 A • Repetitive peak off-state voltage = 600 V • Gate triggering current = 5 mA Z00607 Standard 0.8 A Triacs Datasheet - production data Description The Z00607 is suitable for low power AC switching applications. Typical applications include home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Thanks to the low gate triggering current these triacs can be .

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A2 G A1 A2 A1 G TO-92 Z00607MA A2 G A2 A1 SOT-223 Z00607MN Features • On-state rms current = 0.8 A • Repetitive peak off-state voltage = 600 V • Gate triggering current = 5 mA Z00607 Standard 0.8 A Triacs Datasheet - production data Description The Z00607 is suitable for low power AC switching applications. Typical applications include home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Thanks to the low gate triggering current these triacs can be driven directly by microcontrollers. June 2014 This is information on a product in full production. DocID6629 Rev 9 1/8 www.st.com Characteristics 1 Characteristics Z00607 Symbol IT(RMS) ITSM I²t dI/dt IGM PG(AV) Tstg Tj Table 1. Absolute maximum ratings Parameter On-state rms current (full sine wave) SOT-223 TO-92 Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz F = 60 Hz I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Peak gate current tp = 20 µs Average gate power dissipation Storage junction temperature range Operating junction temperature range Ttab = 85 °C TL = 50 °C t = 20 ms t = 16.7 ms Tj = 110 °C Tj = 110 °C Tj = 110 °C Value Unit 0.8 A 9 A 9.5 0.45 A²s 20 A/µs 1 0.1 - 40 to + 150 - 40 to + 110 A W °C Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test Conditions Quadrant Value IGT (1) VGT VGD IH (2) VD = 12 V, RL = 30 Ω VD = VDRM, RL = 3.3 kΩ, Τj = 110 °Χ IT = 200 mA IL IG = 1.2 IGT dV/dt (2) VD = 67% VDRM, gate open Τj = 110 °Χ (dV/dt)c (2) (δς/δτ)χ = 0.35 Α/μσ, Τj = 110 °Χ 1. minimum IGT is guaranteed at 5% of IGT max. 2. for both polarities of A2 referenced to A1. I - II - III IV ALL ALL I - III - IV II MAX MAX MIN MX. MAX MIN MIN 5 7 1.3 0.2 5 10 20 10 1.5 Unit mA V V mA mA V/µs V/µs Table 3. Static characteristics Symbol Test Conditions VTM(1) Vto (1) Rd (1) ITM = 1.1 A tp = 380 µs Threshold voltage Dynamic resistance IDRM IRRM VDRM = VRRM = 600 V 1. for both polarities of A2 referenced to A1. Tj = 25 °C Tj = 110 °C Tj = 110 °C Tj = 25 °C Tj = 110 °C MAX. MAX. MAX. MAX. 2/8 DocID6629 Rev 9 Value 1.5 0.95 420 5 0.1 Unit V V mΩ µA mA Z00607 Characteristics Symbol Rth(j-t) Rth(j-I) Junction to tab (AC) Junction to lead (AC) Rth(j-a) Junction to ambient 1. S = Copper surface under tab. Table 4. Thermal resistances Parameter S(1) = 5 cm² SOT-223 TO-92 SOT-223 TO-92 Value 25 60 60 150 Unit °C/W °C/W Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 IT(RMS)(A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Figure 2. Relative variation of gate trigger, holding and latching current versus junction temperature IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C] 2.5 2.0 IGT 1.5 IH & IL 1.0 Typical values 0.5 Tj (°C) 0.0 -40 -20 0 20 40 60 80 100 120 Figure 3. Surge peak on-state current vers.


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