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KM68B261A Dataheets PDF



Part Number KM68B261A
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 32K x 8 Bit High-Speed BiCMOS Static RAM
Datasheet KM68B261A DatasheetKM68B261A Datasheet (PDF)

KM68B261A 32K x 8 Bit High-Speed BiCMOS Static RAM FEATURES • Fast Access Time 6,7,8ns(Max.) • Low Power Dissipation Standby (TTL) : 110 mA(Max.) (CMOS) : 20 mA(Max.) Operating Current : 170 mA(f=100MHz) • Single 5V ± 5% Power Supply • TTL Compatible Inputs and Outputs www.DataSheet4U.com • Fully Static Operation - No Clock or Refresh required • Three State Outputs • Center Power/Ground Pin Configuration • Standard Pin Configuration KM68B261AJ : 32-SOJ-300 BiCMOS SRAM GENERAL DESCRIPTION The KM.

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KM68B261A 32K x 8 Bit High-Speed BiCMOS Static RAM FEATURES • Fast Access Time 6,7,8ns(Max.) • Low Power Dissipation Standby (TTL) : 110 mA(Max.) (CMOS) : 20 mA(Max.) Operating Current : 170 mA(f=100MHz) • Single 5V ± 5% Power Supply • TTL Compatible Inputs and Outputs www.DataSheet4U.com • Fully Static Operation - No Clock or Refresh required • Three State Outputs • Center Power/Ground Pin Configuration • Standard Pin Configuration KM68B261AJ : 32-SOJ-300 BiCMOS SRAM GENERAL DESCRIPTION The KM68B261A is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68B261A uses eight common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using Samsung`s advanced BiCMOS process and designed for high-speed system applications. It is particularly well suited for use in highdensity high-speed system applications. The KM68B261A is packaged in a 300 mil 32-pin plastic SOJ. FUNCTIONAL BLOCK DIAGRAM Pre-Charge Circuit PIN CONFIGURATION(TOP VIEW) A0 A1 A2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 N.C A14 A13 A12 /OE I/O8 I/O7 Vss Vcc I/O6 I/O5 A11 A10 A9 A8 N.C A0 A1 A2 A3 A4 A5 A6 Row Select MEMORY ARRAY 128 Rows 256x8 Columns A3 /CS I/O1 I/O2 Vcc Vss I/O3 I/O4 /WE A4 Data Cont. I/O Circuit Column Select A5 A6 A7 SOJ 25 24 23 22 21 20 19 18 17 I/O1-I/O8 A7 A8 A9 A10 A11 A12 A13 A14 PIN DESCRIPTION Pin Name Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power (5V) Ground No Connection A0-A14 /WE /CS /OE I/O1-I/O8 Vcc Vss N.C /CS /WE /OE 1 Rev 2.0 October-1994 KM68B261A ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature Operating Temperature Symbol VIN,OUT Vcc PD Tstg TA BiCMOS SRAM Rating - 0.5 to 7.0 - 0.5 to 7.0 1.0 - 65 to 150 0 to 70 Unit V V W °C °C * Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. www.DataSheet4U.com This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS (TA= 0 to 70 °C ) Parameter Supply Voltage Ground Input Low Voltage Input High Voltage Symbol Vcc Vss VIH VIL Min 4.75 0 2.2 -0.5* Typ. 5.0 0 Max 5.25 0 Vcc+0.5** 0.8 Unit V V V V * VIL(Min) = -2.0 (Pulse Width ≤3ns) for I ≤ 20mA ** VIH(Max) = Vcc+2.0V(Pulse width ≤ 8ns)for I ≤ 20mA (TA= 0 to 70°C, Vcc=5 V ± 5%, unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Operating Current Standby Current Symbol ILI ILO ICC ISB ISB1 Output Low Voltage Output High Voltage VOL VOH Test Conditions VIN=Vss to Vcc /CS=VIH or /OE=VIH or /WE=VIL VOUT=VSS to Vcc f=100MHz, 100% Duty, /CS=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CS=VIH f=0MHz, /CS ≥ Vcc-0.2V, VIN ≥ Vcc -0.2V or VIN ≤ 0.2V IOL=8mA IOH = - 4mA 2.4 0.4 V V 110 20 mA mA 170 mA Min -10 -10 Max 10 10 Unit µA µA DC AND OPERATING CHARACTERISTICS 2 Rev 2.0 October-1994 KM68B261A CAPACITANCE*(f=1MHz, TA =25 °C) Item Input Capacitance Input/Output Capacitance Symbol CIN CI/O Test Condition VIN=0V VI/O=0V BiCMOS SRAM Min. - Max. 7 7 Unit pF pF * Note: Capacitance is sampled and not 100% tested. www.DataSheet4U.com AC CHARACTERISTICS TEST CONDITIONS ON DATA RAM (TA= 0 to 70°C, Vcc=5V ± Parameter Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load 5%, unless otherwise specified.) Value 0 to 3 V 3ns 1.5V See below Output Load (A) Output Load (B) for tHZ, tLZ, tWHZ, tOW, tOLZ, & tOHZ DOUT ZO=50 Ω DOUT RL=50 Ω 255 Ω VL =1.5V +5V 480 Ω 5pF* * Including Scope and Jig Capacitance 3 Rev 2.0 October-1994 KM68B261A READ CYCLE KM68B261A-6 Parameter Read Cycle Time Address Access Time Chip Select to Output www.DataSheet4U.com Output Enable to Valid Output BiCMOS SRAM KM68B261A -7 Min 7 3 1 0 0 3 Max 7 7 4 3.5 3.5 - KM68B261A -8 Unit Min 8 3 1 0 0 3 Max 8 8 4 4 4 ns ns ns ns ns ns ns ns ns Symbol Min tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH 6 3 1 0 0 3 Max 6 6 4 3 3 - Chip Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change WRITE CYCLE KM68B261A -6 Parameter Write Cycle Time Chip Select to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width(/OE High) Write Pulse Width(/OE Low) Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z Symbol Min tWC tCW tAS tAW tWP tWP tWR tWHZ tDW tDH tOW 6 6 0 3.5 3.5 6 1 0 3 0 3 Max 3 Min 7 7 0 4 4 7 1 0 3.5 0 3 Max 3.5 Min 8 8 0 4.5 4.5 8 1 0 4 0 3 Max 4 ns ns ns ns ns ns ns ns ns ns ns KM68B26.


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