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DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D392
BLF861A UHF power LDMOS transistor
Product specification Supersedes data of 2000 Aug 04 2001 Feb 09
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch errors • Source on underside eliminates DC isolators; reducing www.DataSheet4U.com common mode inductance • Designed for broadband operation (UHF band) • Internal input and output matching for high gain and optimum broadband operation.
1 2
BLF861A
PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source connected to flange DESCRIPTION
APPLICATIONS • Communication transmitter applications in the UHF frequency range.
3 4
MBK777
5
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source 860 MHz test circuit. MODE OF OPERATION CW, class-AB PAL BG (TV); class-AB f (MHz) 860 860 (ch 69) VDS (V) 32 32 PL (W) 150 >150 typ. 170 (peak sync)
Top view
Fig.1 Simplified outline.
Gp (dB) >13.5 typ. 14.5 >14
ηD (%) >50 >40
∆Gp (dB) ≤1 note 1
Note 1. Sync compression: input sync ≥ 33%; output sync 27%. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb ≤ 25 °C CONDITIONS − − − − −65 − MIN. 65 ±15 18 318 +150 200 MAX. V V A W °C °C UNIT
2001 Feb 09
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 318 W
BLF861A
VALUE 0.55 0.2
UNIT K/W K/W
CHARACTERISTICS Tj = 25 °C; per section; unless otherwise specified. www.DataSheet4U.com SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss Note 1. Capacitance values without internal matching. PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.5 mA VDS = 10 V; ID = 150 mA VGS = 0; VDS = 32 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±15 V; VDS = 0 VDS = 10 V; ID = 4 A VGS = VGSth + 9 V; ID = 4 A VGS = 0; VDS = 32 V; f = 1 MHz VGS = 0; VDS = 32 V; f = 1 MHz
(1)
MIN. 65 4 − 18 − − − − −
TYP. − − − − − 4 160 82 40 6
MAX. − 5.5 2.2 − 25 − − − − −
UNIT V V µA A nA S mΩ pF pF pF
VGS = 0; VDS = 32 V; f = 1 MHz (1) −
(1)
handbook, halfpage
100 Coss (pF) 80
MLD510
60
40
20
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz; Tj .