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M3D392
BLF861A UHF power LDMOS transistor
Product specification Supersedes data of 2000 Aug 04 2001 Feb 09
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch errors • Source on underside eliminates DC isolators; reducing www.DataSheet4U.com common mode inductance • Designed for broadband operation (UHF band) • Internal input and output matching for high gain and optimum broadband operation.
1 2
BLF861A
PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source connected to flange DESCRIPTION
APPLICATIONS • Communication transmitter applications in the UHF frequency range.
3 4
MBK777
5
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source 860 MHz test circuit. MODE OF OPERATION CW, class-AB PAL BG (TV); class-AB f (MHz) 860 860 (ch 69) VDS (V) 32 32 PL (W) 150 >150 typ. 170 (peak sync)
Top view
Fig.1 Simplified outline.
Gp (dB) >13.5 typ. 14.5 >14
ηD (%) >50 >40
∆Gp (dB) ≤1 note 1
Note 1. Sync compression: input sync ≥ 33%; output sync 27%. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb ≤ 25 °C CONDITIONS − − − − −65 − MIN. 65 ±15 18 318 +150 200 MAX. V V A W °C °C UNIT
2001 Feb 09
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 318 W
BLF861A
VALUE 0.55 0.2
UNIT K/W K/W
CHARACTERISTICS Tj = 25 °C; per section; unless otherwise specified. www.DataSheet4U.com SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss Note 1. Capacitance values without internal matching. PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.5 mA VDS = 10 V; ID = 150 mA VGS = 0; VDS = 32 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±15 V; VDS = 0 VDS = 10 V; ID = 4 A VGS = VGSth + 9 V; ID = 4 A VGS = 0; VDS = 32 V; f = 1 MHz VGS = 0; VDS = 32 V; f = 1 MHz
(1)
MIN. 65 4 − 18 − − − − −
TYP. − − − − − 4 160 82 40 6
MAX. − 5.5 2.2 − 25 − − − − −
UNIT V V µA A nA S mΩ pF pF pF
VGS = 0; VDS = 32 V; f = 1 MHz (1) −
(1)
handbook, halfpage
100 Coss (pF) 80
MLD510
60
40
20
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.2
Output capacitance as a function of drain-source voltage; typical values per section.
2001 Feb 09
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF861A
APPLICATION INFORMATION RF performance in a common source 860 MHz test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W; unless otherwise specified. MODE OF OPERATION CW; class-AB 2-tone; class-AB www.DataSheet4U.com PAL BG (TV); class-AB f (MHz) 860 f1 = 860 f1 = 860.1 860 (ch 69) VDS (V) 32 32 32 IDQ (A) 1 1 1 PL (W) 150 150 (PEP) > 150 typ. 170 (peak sync) Gp (dB) >13.5 typ. 14.5 >14 >14 ηD (%) >50 >40 >40 dIm (dBc) − ≤−25 − ∆Gp (dB) ≤1 − note 1
Note 1. Sync compression: input sync ≥ 33%; output sync 27% measured in an 860 MHz test circuit. Ruggedness in class-AB operation The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated load power. The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load mismatch errors under the nominal power condition.
handbook, halfpage
12
MCD871
handbook, halfpage
10
MCD872
zi (Ω)
xi
ZL (Ω) 5
RL
8
4
ri
0 XL
0 400
500
600
700
800 900 f (MHz)
−5 400
500
600
700
800 900 f (MHz)
CW, class-AB operation; VDS = 32 V; IDQ = 1 A; PL = 170 W (total device); Th = 25 °C.
CW, class-AB operation; VDS = 32 V; IDQ = 1 A; PL = 170 W (total device); Th = 25 °C.
Fig.3
Input impedance as a function of frequency (series components); typical push-pull values.
Fig.4
Load impedance as a function of frequency (series components); typical push-pull values.
2001 Feb 09
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF861A
handbook, halfpage
20
MLD514
80 ηD (%) 60
handbook, halfpage
0
MLD515
Gp (dB) 15
Gp
dim (dBc) −20 d3
www.DataSheet4U.com
10
ηD 40 −40
d5
5
20
−60
0 0 100
0 200 300 PL (PEP) (W)
−80
0
100
200 300 PL (PE.