Fast IGBT
SGP15N60 SGW15N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with low conduct...
Description
SGP15N60 SGW15N60
Fast IGBT in NPT-technology
75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: www.DataSheet4U.com- very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
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C
G
E
PG-TO-220-3-1
PG-TO-247-3-21
Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP15N60 SGW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C
2
VCE 600V 600V
IC 15A 15A
VCE(sat) 2.3V 2.3V
Tj 150°C 150°C
Marking G15N60 G15N60
Package PG-TO-220-3-1 PG-TO-247-3-21
Symbol VCE IC
Value 600 31 15
Unit V A
ICpul s VGE EAS
62 62 ±20 85 V mJ
tSC Ptot
10 139
µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
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J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: ...
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