DatasheetsPDF.com

K2698 Dataheets PDF



Part Number K2698
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet K2698 DatasheetK2698 Datasheet (PDF)

2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2698 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−g.

  K2698   K2698


Document
2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2698 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 500 500 ±30 15 60 150 630 15 15 150 −55~150 V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 0.833 50 °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.76 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.0 A VDS = 10 V, ID = 7.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz Rise time tr 2SK2698 Min Typ. Max Unit — — ±10 ±30 — — — — 100 500 — — 2.0 — 4.0 — 0.35 0.4 6 11 — — 2600 — — 280 — — 880 — μA V μA V V Ω S pF — 50 — Switching time Turn−on time Fall time ton tf — 85 — ns — 65 — Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge toff Qg Qgs VDD ≈ 400 V, VGS = 10 V, ID = 15 A Qgd — 260 — — 58 — — 36 — — 22 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V dIDR / dt = 100 A / μs Min Typ. Max Unit — — 15 A — — 60 A — — −1.7 V — 400 — ns — 4.3 — μC Marking TOSHIBA K2698 Part No. (or abbreviation code) Lot No. Note 4 Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK2698 3 2009-09-29 2SK2698 4 2009-09-29 2SK2698 RG = 25 Ω VDD = 90 V, L = 4.76 mH EAS = 1 2 ⋅ L ⋅ I2 ⋅ ⎜⎛ ⎝ BVDSS BVDSS − VDD ⎟⎞ ⎠ 5 2009-09-29 2SK2698 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Tho.


TU402 K2698 TU404


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)