Document
SEMiX 151GB12T4s
Absolute Maximum Ratings Symbol Conditions IGBT
1 156 8 - () * - '2) * 1563+1
:.. ; 8 < (. ; = '(.. - '2) * 1?563+1?
- '). * () * 4. *
()*/
# Values
'(.. (3. '4. 7). 9 (. '.
Units
" " " >
SEMiX®1s Trench IGBT Modules
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Inverse Diode
1? 1?56 () * 4. * '@. '7. 7). :.. A 7. ,,, B '2) A 7. ,,, B '() "/ '
, 7... " " " " * *
SEMiX 151GB12T4s SEMiX 151GAL12T4s SEMiX 151GAR12T4s Target Data
Module
156
Features
Typical Applications "
# $%
& #
Remarks # %# ! #
-').* '()* +,
!
Characteristics Symbol Conditions IGBT
8 1 . E8 58
#
# 5-A 18H 8 A4 ,,, B') - () * 58
C 58 C 8 ') 8 / 1 : " 8 . /
()*/
# min.
) - () * - () * - '). * - ()* - ').* ./4 ./2 :/2 '. '/4 (/( @/3 ./: ./) 4). ) 1
" - '). * ./@ ./4 2/3 './2 ( (/7
typ.
)/4
max.
:/)
Units
" C C
?
?
?
F
G
G
1
'). "/ 8 ') - ()* , - ').* , ()/ 8 . ' 6D
'2
'2 ./'@
IJ&
GB
GAL
GAR
1
16-07-2007 SCH
© by SEMIKRON
SEMiX 151GB12T4s
Characteristics Symbol Conditions Inverse Diode
? ?. ? 1?
'). "; 8 . - () * , - '). * , - () * - '). * - () * - '). * 1556 E 5-AK 1?
'). " 8 A') ; :.. ## ': ,/
A #
N 6)
6: 3 (/) () * '() * 5A 6 6 ./2 ' ./.2) ) ) '). '..* 5()) NC 55'.. +QH'..J'()'JA'J'..R; QIR ./7@39)P 3)).9(P - '). * ''/3 ./3'
min.
typ.
(/') (/.) '/3 ./@ )/2 2/2
max.
(/7) (/7 '/) '/' :/3 4/2
Units
C C " > G IJ&
C C IJ& O O NC I
SEMiX 1s Trench IGBT Modules
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®
Module SEMiX 151GB12T4s SEMiX 151GAL12T4s SEMiX 151GAR12T4s Target Data
L 5MBM
Features
Typical Applications "
# $%
& #
Remarks # %# ! #
-').* '()* +,
!
Temperature sensor
5'.. H'..J'()
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GB
GAL
GAR
2
16-07-2007 SCH
© by SEMIKRON
SEMiX 151GB12T4s
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Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
16-07-2007 SCH
© by SEMIKRON
SEMiX 151GB12T4s
www.DataSheet4U.com
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
4
16-07-2007 SCH
© by SEMIKRON
SEMiX 151GB12T4s
%
8H
%
8"L
%
8"5
www.DataSheet4U.com
5
16-07-2007 SCH
© by SEMIKRON
.