SiHFR9310

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D S G GS GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration -400 VGS = -10 V 7.0 13 3.2 5.0 Single FEATURES Advanced process technology Fully avalanche rated Surface-mount (IRFR9310, SiHFR9310) Straight lead (IRFU9310, SiHFU9310) P-channel Fast switching Available Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR9310-GE3 - Lead (Pb)-free IRFR9310PbF Note a. See device orientation DPAK (TO-252) SiHFR9310TRL-GE3 IRFR9310TRLPbF-BE3 IRFR9310TRLPbFa DPAK (TO-252) SiHFR9310TR-GE3 IRFR9310TRPbFa DPAK (...