IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(o...
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 200 VGS = - 10 V
8.9 2.1 3.9 Single
S
3.0
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
D P-Channel MOSFET
FEATURES Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9210, SiHFR9210)
Straight Lead (IRFU9210, SiHFU9210)
Available in Tape and Reel
P-Channel
Fast Switching
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION The power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET
transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free SiHFR9210-GE3
Lead (Pb)-free
IRFR9210PbF SiHFR9210-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR9210TR-GE3 IRFR9210TRPbFa SiHFR9210T-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continu...