Power MOSFET
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(o...
Description
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 100 VGS = - 10 V
8.7 2.2 4.1 Single
1.2
S
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
D P-Channel MOSFET
FEATURES Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9110, SiHFR9110)
Straight Lead (IRFU9110, SiHFU9110)
Available in Tape and Reel
P-Channel
Fast Switching
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252) SiHFR9110-GE3 IRFR9110PbF SiHFR9110-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR9110TRL-GE3 IRFR9110TRLPbFa SiHFR9110TL-E3a
DPAK (TO-252) SiHFR9110TR-GE3 IRFR9110TRPbFa SiHFR9110T-E3a
IPAK (TO-251) SiHFU9110-GE3 IRFU9110PbF SiHFU9110-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-S...
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