IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 100 VGS = - 10 V
8.7 2.2 4.1 Single
1.2
S
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
D P-Channel MOSFET
FEATURES • Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9110, SiHFR9110)
• Straight Lead (IRFU9110, SiHFU9110)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252) SiHFR9110-GE3 IRFR9110PbF SiHFR9110-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR9110TRL-GE3 IRFR9110TRLPbFa SiHFR9110TL-E3a
DPAK (TO-252) SiHFR9110TR-GE3 IRFR9110TRPbFa SiHFR9110T-E3a
IPAK (TO-251) SiHFU9110-GE3 IRFU9110PbF SiHFU9110-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current Pulsed Drain Currenta
VGS at - 10 V
TC = 25 °C TC = 100 °C
ID IDM
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD
dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 21 mH, Rg = 25 , IAS = - 3.1 A (see fig. 12). c. ISD - 4.0 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT - 100 ± 20 - 3.1 - 2.0 - 12 0.20 0.020 140 - 3.1 2.5
25 2.5 - 5.5 - 55 to + 150 260
UNIT V
A
W/°C mJ A mJ W V/ns °C
S13-0168-Rev. D, 04-Feb-13
1
Document Number: 91279
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB Mount)a
RthJA RthJA
Maximum Junction-to-Case (Drain)
RthJC
No.