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IRFR9110 Dataheets PDF



Part Number IRFR9110
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFR9110 DatasheetIRFR9110 Datasheet (PDF)

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 8.7 2.2 4.1 Single 1.2 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110) • Straight Lead (IRFU9110, SiHFU9110) • Available in Tape and Reel • P-Channel • Fast Switching • Material categ.

  IRFR9110   IRFR9110



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IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 8.7 2.2 4.1 Single 1.2 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110) • Straight Lead (IRFU9110, SiHFU9110) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR9110-GE3 IRFR9110PbF SiHFR9110-E3 Note a. See device orientation. DPAK (TO-252) SiHFR9110TRL-GE3 IRFR9110TRLPbFa SiHFR9110TL-E3a DPAK (TO-252) SiHFR9110TR-GE3 IRFR9110TRPbFa SiHFR9110T-E3a IPAK (TO-251) SiHFU9110-GE3 IRFU9110PbF SiHFU9110-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current Pulsed Drain Currenta VGS at - 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 21 mH, Rg = 25 , IAS = - 3.1 A (see fig. 12). c. ISD  - 4.0 A, dI/dt  75 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT - 100 ± 20 - 3.1 - 2.0 - 12 0.20 0.020 140 - 3.1 2.5 25 2.5 - 5.5 - 55 to + 150 260 UNIT V A W/°C mJ A mJ W V/ns °C S13-0168-Rev. D, 04-Feb-13 1 Document Number: 91279 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a RthJA RthJA Maximum Junction-to-Case (Drain) RthJC No.


SiHFU9110 IRFR9110 IRFU9110


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