IRFR9110

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 8.7 2.2 4.1 Single 1.2 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR9110, SiHFR9110) Straight Lead (IRFU9110, SiHFU9110) Available in Tape and Reel P-Channel Fast Switching Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR9110-GE3 IRFR9110PbF SiHFR9110-E3 Note a. See device orientation. DPAK (TO-252) SiHFR9110TRL-GE3 IRFR9110TRLPbFa SiHFR9110TL-E3a DPAK (TO-252) SiHFR9110TR-GE3 IRFR9110TRPbFa SiHFR9110T-E3a IPAK (TO-251) SiHFU9110-GE3 IRFU9110PbF SiHFU9110-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-S...