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IRFU9024 Dataheets PDF



Part Number IRFU9024
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFU9024 DatasheetIRFU9024 Datasheet (PDF)

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 19 5.4 11 Single 0.28 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024, SiHFR9024) • Straight Lead (IRFU9024, SiHFU9024) • Available in Tape and Reel • P-Channel • Fast Switching • Material categor.

  IRFU9024   IRFU9024


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IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 19 5.4 11 Single 0.28 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024, SiHFR9024) • Straight Lead (IRFU9024, SiHFU9024) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR9024-GE3 Lead (Pb)-free IRFR9024PbF SiHFR9024-E3 Note a. See device orientation. DPAK (TO-252) SiHFR9024TR-GE3a IRFR9024TRPbFa SiHFR9024T-E3a DPAK (TO-252) SiHFR9024TRL-GE3a IRFR9024TRLPbFa SiHFR9024TL-E3a DPAK (TO-252) SiHFR9024TRR-GE3a IRFR9024TRRPbFa SiHFR9024TR-E3a IPAK (TO-251) SiHFU9024-GE3 IRFU9024PbF SiHFU9024-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at - 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = - 8.8 A (see fig. 12). c. ISD  - 11 A, dI/dt  140 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT - 60 ± 20 - 8.8 - 5.6 - 35 0.33 0.020 300 - 8.8 5.0 42 2.5 - 4.5 - 55 to + 150 260 UNIT V A W/°C mJ A mJ W V/ns °C S13-0168-Rev. D, 04-Feb-13 1 Document Number: 91278 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a RthJA RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). MIN. - TYP. - MAX. 110 50 3.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = - 60 V, VGS = 0 V VDS = - 48 V, VGS = 0 V, TJ = 125 °C VGS = - 10 V ID = - 5.3 Ab VDS = - 25 V, ID = - 5.3 A - 60 - - 2.0 - 2.9 - 0.063 - - 4.0 ± 100 - 100 - 500 0.28 - V V/°C V nA μA  S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = - 25 V, f = 1.0 MHz VGS = - 10 V ID = - 11 A, VDS = - 48 V, see fig. 6 and 13b VDD = - 30 V, ID = - 11 A, Rg = 18 , RD = 2.5 , see fig. 10b - 570 360 - pF 65 - - 19 - 5.4 nC - 11 13 68 - ns 15 29 - Internal Drain Inductance LD Internal Source Inductance Drain-Source Body Diode Characteristics LS Between lead, 6 mm (0.25") from package and center of die contact D G S - 4.5 nH - 7.5 - Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta IS ISM MOSFET symbol showing the integral reverse p - n junction diode D G S - - - 8.8 A - - - 35 Body Diode Voltage VSD TJ = 25 °C, IS = - 8.8 A, VGS = 0 Vb - - - 6.3 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb - 100 200 ns Qrr - 0.32 0.64 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Rep.


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