IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 60 VGS = - 10 V
19 5.4 11 Single
0.28
S
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
D P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9024, SiHFR9024)
• Straight Lead (IRFU9024, SiHFU9024)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHFR9024-GE3
Lead (Pb)-free
IRFR9024PbF SiHFR9024-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR9024TR-GE3a
IRFR9024TRPbFa SiHFR9024T-E3a
DPAK (TO-252) SiHFR9024TRL-GE3a
IRFR9024TRLPbFa SiHFR9024TL-E3a
DPAK (TO-252) SiHFR9024TRR-GE3a
IRFR9024TRRPbFa SiHFR9024TR-E3a
IPAK (TO-251) SiHFU9024-GE3
IRFU9024PbF SiHFU9024-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at - 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD
dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = - 8.8 A (see fig. 12). c. ISD - 11 A, dI/dt 140 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT - 60 ± 20 - 8.8 - 5.6 - 35 0.33 0.020 300 - 8.8 5.0 42 2.5 - 4.5 - 55 to + 150 260
UNIT V
A
W/°C mJ A mJ W V/ns °C
S13-0168-Rev. D, 04-Feb-13
1
Document Number: 91278
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB Mount)a
RthJA RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN. -
TYP. -
MAX. 110 50 3.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 5.3 Ab
VDS = - 25 V, ID = - 5.3 A
- 60 -
- 2.0 -
2.9
- 0.063
-
- 4.0 ± 100 - 100 - 500 0.28 -
V V/°C
V nA
μA
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, VDS = - 25 V, f = 1.0 MHz
VGS = - 10 V
ID = - 11 A, VDS = - 48 V, see fig. 6 and 13b
VDD = - 30 V, ID = - 11 A, Rg = 18 , RD = 2.5 , see fig. 10b
-
570 360 - pF 65 -
- 19 - 5.4 nC - 11 13 68 -
ns 15 29 -
Internal Drain Inductance
LD
Internal Source Inductance Drain-Source Body Diode Characteristics
LS
Between lead, 6 mm (0.25") from package and center of die contact
D
G S
- 4.5 nH
- 7.5 -
Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta
IS ISM
MOSFET symbol showing the
integral reverse p - n junction diode
D
G S
- - - 8.8 A
- - - 35
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 8.8 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb
-
100 200 ns
Qrr - 0.32 0.64 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Rep.